BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Typical DC current gain.
High collectorbase voltagevcbov high speed switching. Buaf datasheet, equivalent, cross reference search. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
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Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope. SOT; The seating plane is electrically isolated from all terminals.
BU DF PHI: NPN+DIO SOT transistor V 8 A 45 W at reichelt elektronik
Typical collector storage and fall time. Typical collector-emitter saturation voltage.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Npn triple diffused bu2508f planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. July 6 Rev 1. Stress above one or more of the limiting values may cause permanent damage to the device.
BUDF Datasheet PDF – Tiger Electronic
July 2 Rev 1. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. This data sheet contains final product specifications. Silicon diffused power transistor buaf datasheet catalog.
Application information Where application information is given, it is advisory and does not form part of the specification. II Extension for repetitive pulse operation. C 1 Turn-off current. Exposure to limiting values for extended periods may affect device reliability. C I Region of permissible DC operation. Refer to mounting instructions for F-pack envelopes.
This data sheet contains target or goal specifications for product development. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, datssheet circuits, diodes, triacs, and other semiconductors.
Typical base-emitter saturation voltage. Forward bias safe operating area.
BU2508DF Silicon Diffused Power Transistor
July 7 Rev 1. July 5 Rev 1. July 1 Rev 1. Budf philips semiconductors, budf datasheet. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
No liability will be accepted by the publisher for any consequence of its use. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Buaf transistor equivalent substitute crossreference search.
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.